Edição das 15h35min de 26 de fevereiro de 2019

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Ion Implantation Laboratory.

Announcements

TERMS OF AGREEMENT - EXTERNAL USERS [1]

PUBLICATION RULLES : AFFILIATION and ACKNOWLEDGEMENT [2]

LABORATORY REGULATIONS AND PROCEDURES [3]

The Ion Implantation Laboratory is a multi-user plataform IE-MULTI complying with the PREMIUM - PROPESQ program.

Infrastructure: Ion accelerators, annealing furnaces, mechanical workshop, sample preparation laboratories, seminar room.

Premium Program scholarship working hours

IAEA ACCELERATORS PORTAL - Accelerator Knowledge Portal [4]

See also the National Institute of Surface Engineering blog [ http://bit.ly/MAdmsG]

BIENNIAL REPORT 2015/16 [5]

BIENNIAL REPORT 2013/14 [6]

ANNUAL REPORT 2012' [7]

ANNUAL REPORT 2011 [8]

ANNUAL REPORT 2010 [9]

Pictures from the Ion Implantation Laboratory http://implantador.multiply.com

SCHEDULE (subject to change)

->To access, click on the respective links:

ION IMPLANTER 500 kV

CRONOGRAMA

TANDETRON 3 MV

CRONOGRAMA

Reservation - Seminar Room

The seminar room of the Ion Implantation Laboratory is for seminars, lectures and meetings. The permanent schedule for the seminar room is shown in the table below.

PERMANENT SCHEDULE (Year/Semester: 2018/02)

The seminar room can be booked for occasional events whenever free. The occasional reservations already booked are the following:

OCCASIONAL RESERVATION (Year/Semester: 2019/01)

To book the seminar room, talk to Prof. Leandro (leandro.langie@ufrgs.br ramal 6550).

Pictures

mais fotos em http://implantador.multiply.com

http://implantador.multiply.com

History

The Ion Implantation Laboratory of the Physics Institute - UFRGS was founded in 1980 by Prof. Fernando C. Zawislak and colleagues who until then worked in the areas of perturbed angular correlation and nuclear physics. The activities of the Ion Implantation Laboratory began with the acquisition of the 400 kV accelerator in 1981 (and 1996 extended to 500 kV), with FINEP resources. In 1989 we received a 250 kV ion implanter as a donation from IBM (USA), which is dedicated to applications in microelectronics. Before the end of the 1990s, the Ion Implantation Laboratory was already one of UFRGS 'successful research facilities, not only for qualified scientific production, but also for the training of phd and master students, and for the intense international exchange.

Implantador

Acelerador Tandetron

As a result of this success, the Ion Implantation group received new financial support from FINEP, which allowed the acquisition, in January 1995, of a 3MV TANDEM accelerator, installed in a new building, and in operation since December 1996.

With these three accelerators, the Laboratory is able to produce ion beams of virtually all stable isotopes of the periodic table, allowing an action that covers, in addition to research in physics, many areas of materials science. On the other hand, the two machines of higher energy, and especially the Tandem accelerator of 3 MV, are efficient instruments in the analysis of materials, surfaces, interfaces and thin films, using Rutherford Backscattering Spectroscopy (RBS), Channeling, Nuclear Reaction Analysis (NRA), Elastic Recoil Detection Analysis (ERDA), Particle Induced X-Ray Emission (PIXE) and Scattering, all available at the Ion Implantation Laboratory of the Physics Institute of the Federal University of Rio Grande do Sul.

Research Lines

• 1. Ion-matter interactions:

• 2. Physics of semiconductor devices:

• 3. Fotoluminescence of Si and Ge nanocrystals formed by ion implantation in SiO₂ and Si₃N₄ matrices and high temperature annealing.

• 4. Study of formation processes and structure of Sn, Pb and Ge nanocrystals formed by ion implantation in SiO₂/Si and SiO₂/SiN/Si.

• 5. Investigation of nanoscopic dielectric films to be used as dielectric gates in advanced semiconductor devices.

• 6. Physicochemical characterization of semiconductor nanostructures.

• 7. Elemental composition characterization of food and study of the ionic transport mechanisms in proteins and cells using the PIXE technique.

• 8. Ion irradiation effects in structural properties of amorphous hydrogenated carbon films.

• 9. Chemical compositional analysis and depth distribution profile of several elements in nanolaminate metalic compounds and nanoscopic multilayers.

• 10. Ion implantation of metalic, polymeric and ceramical systems by plasma imersion.

• 11. Nanostructured shieldings.

• 12. Use of ion implantation in optimizing the thermal stability of the microstructure of contacts and interconnections of Al and Cu in microelectronic devices.

• 13. Semiconductor nanowires (synthesis, modification, characterization and aplications).

• 14 Formation of metalic standards for the selective growth of semiconductor nanowires using litography technique

Laboratory Organization Chart

Organograma do Laboratório de Implantação Iônica - Reunião 17/03/2015

General Coordinator - Prof. Pedro Luis Grande

General Vice-Coordinator - Prof. Paulo. F. P. Fichtner

Accelerators Coordinator - Prof. Johnny F. Dias

Accelerators Vice-Coordenador - Prof. Livio Amaral

Management Committee

Pedro Luis Grande, Johnny F. Dias, Paulo F. P. Fichtner Livio Amaral, Henri Boudinov, Jonder Morais, Fernanda Stedile, Cláudio Radtke

Management Sub-Committee - accelerators

Johnny F. Dias, Agostinho Bulla, Livio Amaral

Users Committee and RAU

José Henrique R. dos Santos, Raquel Giulian, Leandro Araújo

Staff

RESEARCHERS

Fernando Claudio Zawislak, Dr. (IF, UFRGS, 1967) - Founder and General Coordinator of the Group from 1980 until 2008 [10]

Moni Behar, Dr. (UBA, ARGENTINA, 1970) - Accelerators Coordinator from 1982 until 2010 [11]

Israel Jacob Rabin Baumvol, Dr. (IF, UFRGS, 1977) [12]

Livio Amaral, Dr. (IF, UFRGS, 1982) [13]

Paulo Fernando Papaleo Fichtner, Dr. (IF, UFRGS, 1987) [14]

Pedro Luís Grande, Dr. (IF, UFRGS, 1989)- General Coordinator of the Group since 2009 Researcher ID[15]

Johnny Ferraz Dias, Dr. (UG, BÉLGICA, 1994)- Accelerators Coordinator since 2010 [16]

Henri Ivanov Boudinov , Dr. (IE-BAN, BULGÁRIA, 1991) [17]

Fernanda Chiarello Stedile, Dr. (IQ, UFRGS, 1994) [18]

Rafael Peretti Pezzi, Dr. (IF, UFRGS, 2009) [19] Caderno de Laboratório

Raul Carlos Fadanelli Filho, Dr. (IF, UFRGS, 2005) [20]

Ricardo Meurer Papaléo, Dr. (U.UPPSALA, SUÉCIA, 1996) - PUC-RS [21]

Rogério Luis Maltez, Dr.(IF, UFRGS, 1997) [22]

Jonder Morais, Dr.(IF, UFRGS, 1999) [23]

Claudio Radtke, Dr. (IF, UFRGS, 2003) [24]]

Cristiano Krug, Dr. (IF, UFRGS, 2003) [25]]

Daniel Lorscheitter Baptista, Dr. (IF, UFRGS, 2003) [26]

Gabriel Viera Soares, Dr. (IF, UFRGS, 2008) [27]

Leandro Langie Araujo, Dr. (IF, UFRGS, 2004) [28]

Raquel Giulian, Dr. (RSPE, ANU, AUSTRÁLIA, 2009) [29]

José Henrique Rodrigues dos Santos, Dr. (IF, UFRGS 1997) [30]

Agenor Hentz da Silva, Dr. (IF,UFRGS, 2008) [31]

ASSOCIATE RESEARCHERS

Douglas Langie da Silva, Dr. (IF, UFRGS, 2004) - Colaborator, UFPel [32]

Eduardo Ceretta Moreira, Dr (IF, UFRGS, 2000) - Colaborator, UNIPAMPA [33]

Irene Teresinha Santos Garcia, Dr (IF, UFRGS, 2001) - Colaborator, UFPEL [34]

Uilson Schwantz Sias, Dr. (IF, UFRGS, 2006) - Colaborator, CEFET-RS [35]

Felipe Kremer, Dr. (IF, UFRGS, 2010) - Colaborator, ANU, Austrália [36]

Carla Eliete Iochims dos Santos, Dr. (IF, UFRGS, 2011) - Colaborator, USP-SP [37]

POST-DOCTORAL RESEARCHERS

Maurício de Albuquerque Sortica [38]

Paulo Fernandes Costa Jobim [39]

Rafael Leal [40]

Wellington Silva Fernandez [41]

RESPONSÁVEL TÉCNICO PELOS ACELERADORES

Agostinho A. Bulla, Eng. Elétrico [42]

TÉCNICOS

Clodomiro F. Castello, técnico operador dos aceleradores[43]

Paulo R. Borba, técnico operador dos aceleradores [44]

Paulo Kovalick, técnico mecânico, responsável pela oficina mecânica [45]

BOLSISTAS PREMIUM

Eduardo Ribeiro dos Santos [46]

Marcelo Cavagnolli [47]

ALUNOS DE DOUTORADO

Anaí Duarte [48]

Augusto Alexandre Durgante de Mattos [49]

Chiara das Dores do Nascimento [50]

Cláudia Telles de Souza [51]

Cristiane Marin [52]

Deise Schafer [53]

Elis Moura Stori [54]

Gabriel Marmitt [55]

Josiane Bueno Salazar [56]

Liana Appel Boufleur [57]

Lúcio Flávio dos Santos Rosa [58]

Masahiro Hatori [59]

Rafael Cardim Pazim [mailto:]

Roberto Moreno Souza dos Reis [60]

Tiago Silva de Ávila [61]

Zacarias Eduardo Fabrim [62]

Eduardo Pitthan Filho [63]

ALUNOS DE MESTRADO

Eliasibe Luis de Souza [64]

João Wagner Oliveira [65]

Luiza Raquel Manfredi da Silva [66]

ALUNOS DE INICIAÇÃO CIENTÍFICA

Deiverti de Vila Bauer [67]

Felipe Dalponte Bregalda [68]

Guilherme Domingues Kolinger [69]

Jady Souza Feijó [70]

Júlio César Ferreira Tâmbara [71]

Lais Gomes de Almeida [72]

Mateus Vicente Wrasse Wiebusch Müller [73]

Mariana de Mello Timm [74]

Vanessa Sobrosa Souza [75]

Viviane Peçanha Antonio [76]

Lucas Hansen [77]

Gustavo Henrique Stedile Dartora [78]

Infra-estrutura

Acelerador Tandetron 3MV	Acelerador 500 kV	Acelerador 250 kV
Reatores e Fornos	Óptica	Sala limpa e preparação
Oficina Mecânica	Salas de apoio	Acelerador 250 kV

Técnicas

TÉCNICAS DE ANÁLISE POR FEIXE DE ÍONS

• Espectrometria de Retroespalhamento Rutherford (RBS) e Canalização

• Análise por Reações Nucleares (NRA)

• Análise por Detecção de Recuo Elástico (ERDA)

• Emissão de Raios-X Induzida por Partículas (PIXE)

• Espalhamento de Íons de Energia Média (MEIS)

IMPLANTAÇÃO E IRRADIAÇÃO IÔNICA

Laboratórios Associados

• Laboratório de Microeletrônica
• Laboratório de Físico-Química de Superfícies e Interfaces Sólidas
• Laboratório de Espectroscopia de Elétrons

Links

• Logotipo
• Aceleradores e feixes de íons
• Semicondutores
• Nano
• Energia
• Manual MEIS
• Manual PowerMeis

Contato

Laboratório de Implantação Iônica Instituto de Física Universidade Federal do Rio Grande do Sul – UFRGS

Av. Bento Gonçalves, 9500 91501-970 Porto Alegre, RS Brasil Fone: +55-51 3308-7004 Fax: +55-51 3308-7286

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